Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T09:24:07.959Z Has data issue: false hasContentIssue false
  • English
  • Français

Direct Bandgap Quantum Wells on GaP

Published online by Cambridge University Press:  03 September 2012

Jong-Won Lee ,
Alfred T. Schremer ,
Dan Fekete ,
James R. Shealy  and
Joseph M. Ballantyne
Jong-Won Lee*
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
Alfred T. Schremer
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
Dan Fekete
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
James R. Shealy
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
*
a)Corresponding author: jongl@msc.cornell.edu
Get access

Abstract

Currently, there are no direct-bandgap alloy semiconductors that can be grown lattice-matched to GaP substrates. A strained layer of GaInP can be grown on GaP, however, with difficulties. First, GaInP is an indirect-bandgap material for In concentrations up to ∼30%. Second, the band alignment between GaInP and GaP is type-II for In concentrations up to ∼60%. The Mathews-Blakeslee critical thickness of GaInP layer on GaP is prohibitively small in the useful In concentration range. GaInP is known to grow in an ordered phase in certain growth conditions. By changing the growth conditions, a heterojunction of ordered GaInP and disordered GaInP can be grown. The conduction band offset going from a disordered GaInP phase to an ordered GaInP phase has been reported to be about 150 meV. Using a layer of ordered GaInP, a QW with type-I band alignment may be grown on GaP for a wider range of composition.

We have grown a series of approximately 60 Å thick GaP/GaInP/GaP strained quantum wells of various compositions using OMVPE. Strong photoluminescence, which exhibited an unusual temperature dependence, has been observed on many samples. A study of the QW’s using X-ray diffraction, TEM, and variable temperature PL reveals behaviors consistent with direct bandgap GaInP quantum wells containing ordered and disordered domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 165
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

b)

On leave from Technion-Israel Institute of Technology, Haifa, Israel.

References

1 Suzuki, T., Soga, T., Jimbo, T., Umeno, M., J. Crystal Growth 115, 158 (1995).Google Scholar
2 Lee, J.S., Salzman, J., Emerson, D., Shealy, J.R., Ballantyne, J.M., Materials Research Symposium Proceedings Vol. 417, p301 (1996).Google Scholar
3 Neff, J.G., Islam, M.R., Chelakara, R.V., Fertitta, K.G., Ciuba, F.J., Dupuis, R.D., Journal of Crystal Growth 145,746 (1995).Google Scholar
4 Lee, J.-W., Schremer, A., Fekete, D., Ballantyne, J., 9th annual meeting of the IEEE Lasers and Electro-Optics Society (IEEE/LEOS), Conference Proceedings, WQ4, Boston, MA, Nov. 18-Nov. 21 (1996).Google Scholar
5 Van de Walle, C.G., Phys. Rev. B, 39, 1871 (1989).Google Scholar
6 Su, L.C., Ho, I.H., and Stringfellow, G.B., Appl. Phys. Lett., 65, 749 (1994).Google Scholar
7 Schneider, R. P. Jr., Jones, E.D., and Follstaedt, D.M.,. Appl. Phys. Lett. 65, 587 (1994).Google Scholar
8 Botha, J.R. and Leitch, A.W.R., Physical Review B, 50, 18147 (1994).Google Scholar
9 Lee, J.-W., Schremer, A.T., Fekete, D., and Ballantyne, J.M., Applied Physics Letters, in press.Google Scholar
10 Wei, Su-Huai, Franceschetti, A., and Zunger, A., MRS symposium proceedings edited by Jones, E.D., Mascarenhas, A., and Petroff, P., (1995, Boston) 417, 3. Su-Huai Wei and A. Zunger, Applied Physics Letters, 64, 757 (1994).Google Scholar