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Discrete Gauge Fields for Graphene Membranes under Mechanical Strain

Published online by Cambridge University Press:  02 September 2013

James V. Sloan ,
Alejandro A. Pacheco Sanjuan ,
Zhengfei Wang ,
Cedric M. Horvath  and
Salvador Barraza-Lopez
James V. Sloan
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
Alejandro A. Pacheco Sanjuan
Affiliation:
Departamento de Ingeniería Mecánica. Universidad del Norte. Barranquilla, Colombia,
Zhengfei Wang
Affiliation:
Department of Materials Science and Engineering. University of Utah. Salt Lake City, UT 84112, USA
Cedric M. Horvath
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
Salvador Barraza-Lopez
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
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Abstract

Mechanical strain creates strong gauge fields in graphene, offering the possibility of controlling its electronic properties. We developed a gauge field theory on a honeycomb lattice valid beyond first-order continuum elasticity. Along the way, we resolve a recent controversy on the theory of strain engineering in graphene: there are no K-point dependent gauge fields.

Keywords

electrical propertieselastic propertieselectronic structure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1549: Symposium P – Carbon Functional Nanomaterials, Graphene and Related 2D-Layered Systems , 2013 , pp. 31 - 34
Copyright
Copyright © Materials Research Society 2013 

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References

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