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Dislocation Distributions in Cd1-xHgxTe/CdTe and Cd1-xHgxTe/Cd1-yZnyTe Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

C. C. R. Watson ,
K. Durose ,
E. O’Keefe ,
J. M. Hudson  and
B. K. Tanner
C. C. R. Watson
Affiliation:
Physics Dept., University of Durham, South Rd, Durham, DH1 3LE, U.K.
K. Durose
Affiliation:
Physics Dept., University of Durham, South Rd, Durham, DH1 3LE, U.K.
E. O’Keefe
Affiliation:
GEC - Marconi IR, Southampton, UK.
J. M. Hudson
Affiliation:
Physics Dept., University of Durham, South Rd, Durham, DH1 3LE, U.K.
B. K. Tanner
Affiliation:
Physics Dept., University of Durham, South Rd, Durham, DH1 3LE, U.K.
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Abstract

Epilayers of LPE Cdo.24Hgo.76Te grown on (111)B CdTe and Cdi-xZnxTe substrates have been examined by defect etching and triple axis x-ray diffraction. Defect etching of bevelled layers has shown the threading dislocation density to fall with increasing distance from the heterointerface, for distances <6μm. In thicker regions however a constant ‘background’ dislocation density is observed. Background dislocation densities of ∼ 3 x 105cm-2 and 9 x 104cm-2 have been measured for layers grown on CdTe and Cdo.96Zn0.04Te respectively, this is compared with a substrate dislocation density of ∼ 3 x 104cm-2 measured in both types of substrates. The increase in the dislocation density within the epilayers compared with the corresponding substrate is discussed. An explanation is also given for the displacement of the peak dislocation density, from the interface to within the layer, observed in the Cd0.76Hg0.24Te / Cd0.96Zn0.04Te system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 301
Copyright
Copyright © Materials Research Society 1995

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