Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T11:35:17.859Z Has data issue: false hasContentIssue false
  • English
  • Français

Dislocation Loops in Spinel Crystals Irradiated Successively with Deep and Shallow Ion Implants

Published online by Cambridge University Press:  22 February 2011

Rebecca X. Ai ,
Nicole Bordes ,
Elizabeth A. Cooper ,
Kurt E. Sickafus ,
Rodney C. Ewing  and
Michael Nastasi
Rebecca X. Ai
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM
Nicole Bordes
Affiliation:
University of New Mexico, Albuquerque, NM.
Elizabeth A. Cooper
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM
Kurt E. Sickafus
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM
Rodney C. Ewing
Affiliation:
University of New Mexico, Albuquerque, NM.
Michael Nastasi
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM
Get access

Abstract

This study examines the influence of microstructural defects on irradiation damage accumulation in the oxide spinel. Single crystals of the compound MgAl2O4 with surface normal [111] were irradiated under cryogenic temperature (100°K) either with 50 keV Ne ions (fluence 5.0 × 1012/cm2), 400 keV Ne ions (fluence 6.7 × 1013cm2) or successively with 400 keV Ne ions followed by 50 keV Ne ions. The projected range of 50 keV Ne ions in spinel is ~50 nm (“shallow”) while the projected range of 400 keV Ne ions is ~ 500 nm (“deep”). Transmission electron microscopy (TEM) was used to examine dislocation loops/ defect clusters formed by the implantation process. Measurements of the dislocation loop size were made using weak-beam imaging technique on cross-sectional TEM ion-implanted specimens. Defect clusters were observed in both deep and shallow implanted specimens, while dislocation loops were observed in the shallow implanted sample that was previously irradiated by 400 keV Ne ions. Cluster size was seen to increase for shallow implants in crystals irradiated with a deep implant (size ~8.5 nm) as compared to crystals treated only to a shallow implant (size ~3.1 nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 147
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Yoshida, N. and Kiritany, M., J. Phys. Soc. Jap. 35 (5), 1418–149 (1973).Google Scholar
2 Clinard, F. W. Jr., Hurley, G. F. and Hobbs, L. W., J. Nucl. Mat. 108/9, 665–670 (1982).Google Scholar
3 Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, ed. by Ziegler, J. F. (Pergamon Press, New York, 1985).Google Scholar
4 Bennedict, J., Anderson, R. and Klepeis, S. T., Proc. 31st Annual Meeting of the Microscopy Society of America, eds. Bailey, G. W. and Rieder, C. L. (San Francisco Press, Inc., San Francisco, CA, 1993) pp . 708–709.Google Scholar
5 Kinoshita, C. and Nakai, K., Jpn. J. Appl. Phys., Ser. 2, Lattice Defects in Ceramics, 105–112 (1989).Google Scholar
6 Zinckle, S. J., J. Am. Ceram. Soc. 72 (8), 1345–51 (1989).Google Scholar