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Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

Published online by Cambridge University Press:  10 February 2011

A. Y. Du ,
M. F. Li ,
T. C. Chong  and
Z. Zhang
A. Y. Du
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260.
M. F. Li
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260.
T. C. Chong
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260.
Z. Zhang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing P.O. Box 2724, Beijing 100080, P. R. China.
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Abstract

Dislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The threading dislocations in bulk layers introduce three hole trap levels HI, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap El with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67–0.73 eV. All dislocation induced traps are nonradiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 617
Copyright
Copyright © Materials Research Society 1998

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