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Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride

Published online by Cambridge University Press:  15 February 2011

H. Fujioka ,
C. Wann ,
D. Park  and
C. Hu
H. Fujioka
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
C. Wann
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
D. Park
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
C. Hu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
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Abstract

Characteristics of ultrathin silicon oxynitride (15–25Å) and its interface with Si have been investigated. Oxynitride films with thickness down to 15Å can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22Å oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 333
Copyright
Copyright © Materials Research Society 1996

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References

1 Momose, H.S., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., and Iwai, H., Technical Digest of 1994 IEDM, p.593.Google Scholar
2 Wong, C.Y., Sun, J.Y.–C., Taur, Y., Oh, C.S., Angelucci, R., and Davari, B., Technical Digest of 1988 IEDM p.238.Google Scholar
3 Morimoto, T., Momose, H.S., Ozawa, Y.,Yamabe, K., Iwai, H., Technical Digest of 1990 IEDM, p.429.Google Scholar
4 Liu, Z., Wann, H., Ko, P., Hu, C., Cheng, Y.C., IEEE electron device letters, 13, 519 (1992).Google Scholar
5 Hwang, H., Ting, W. Kwong, D.–L., Lee, J., Thechnical Digest of 1990 IEDM, p.421.Google Scholar
6 Green, M.A. and Shewchin, J., Solid-State Electron. 17, 349 (1974).Google Scholar
7 Lenzlinger, M. and Snow, E.H., J. Appl. Phys. 40, 278 (1969).Google Scholar
8 Weinberg, Z.A., J. Appl. Phys. 53, 5052 (1982).Google Scholar
9 Schuegraf, K.F., King, C.C., and Hu, C., 1992 Symposium on VLSI TDTP, p18Google Scholar
10 Fujioka, H., Wann, H.–J., Park, D., Hu, C., submitted to APL.Google Scholar
11 Sze, S.M., Physics of Semiconductor Devices,Wiley, NewYork, 1981, p. 368 Google Scholar
12 Schuegraf, K.F., King, C.C., and Hu, C., 1993 Symposium on VLSI TSA, p.86.Google Scholar