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Doping Effects on the Etching Chemistry of GaAs and Si

Published online by Cambridge University Press:  25 February 2011

F. A. Houle
F. A. Houle*
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Abstract

Doping effects on semiconductor etching rates have been proposed to be associated with field effects in the near-surface region. Detailed investigations of the chemistry of nand p-type Si and GaAs indicate that the majority carrier can also play an important role in determining the reactivity of surface intermediates, providing an independent mechanism for influencing the etch rate. A microscopic picture of central driving forces in semiconductor etching deduced from the doping cffects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 25
Copyright
Copyright © Materials Research Society 1991

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References

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