No CrossRef data available.
Article contents
Double-Gated Singly-Addressable Polysilicon Tip Array Fabrication and Characterization
Published online by Cambridge University Press: 17 March 2011
Abstract
Polysilicon-on-insulator singly-addressable arrays, consisting of double-gated field emission cells, were fabricated and tested. The field-emission tips were formed by a subtractive technique, using 2.5 µm thick polysilicon stripes on an insulating substrate. The tip structure was oxidized for dielectric isolation and coated with a 0.4 µm polysilicon layer as a first gate electrode. The polysilicon layer was then subsequently oxidized to provide a second isolation layer for separation from a 0.1 µm gold film, deposited as a second gate electrode. Finally, the 1.5 µm aperture was formed, combining wet etching of the silicon dioxide and dry etching of the polysilicon layers. The matrix allows addressing electrically any emission cell at the intersection of a cathode column and an extracting gate line. An independent voltage can be applied to the second gate during operation to focus the electron beam of an operating tip.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2001