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DSC Studies of P-Doped A-Si:H

Published online by Cambridge University Press:  26 February 2011

Shinji Matsuo ,
Hiroyuki Nasu ,
Chikashi Akamatsu ,
Takeshi Imura  and
Yukio Osaka
Shinji Matsuo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima, 724 Japan
Hiroyuki Nasu
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima, 724 Japan
Chikashi Akamatsu
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima, 724 Japan
Takeshi Imura
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima, 724 Japan
Yukio Osaka
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima, 724 Japan
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Abstract

Differential scanning calorimetry (DSC) studies of P-doped hydrogenated amorphous silicon (a-Si:H) show characteristixc behaviors of glass transition phenomena. The glass transition temperature (Tg) detected by DSC for each sample well agrees with the equilibration temperature (TE) determined by the temperature dependence of dc conductivity. Regarding the influence of hydrogen content, Tg decreases and heat energy absorbed in this reaction increases, as hydrogen content increases. The interpretation for these phenomena is successfully attempted by the simulation based on the excess heat capacity model caused by the equilibrium process of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 297
Copyright
Copyright © Materials Research Society 1988

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References

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