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Effect of Copper-Induced Recrystallization on the Piezoresistivity of Germanium Films

Published online by Cambridge University Press:  10 February 2011

A. Khakifirooz ,
S. S. Mohajerzadeh ,
S. Haji  and
E. Asl Soleimani
A. Khakifirooz
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN, khaki@khorshid.ece.ut.ac.ir
S. S. Mohajerzadeh
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
S. Haji
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
E. Asl Soleimani
Affiliation:
ECE Deparmment, University of Tehran, Tehran 14399, IRAN
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Abstract

Effect of copper-induced recrystallization on the piezoresistivity of germanium films is reported. SEM and XRD are used to study the crystalline structure of the films, while RBS, PIXE, and EDX are utilized to investigate their composition. Significant grain growth is observed in Ge films, upon annealing a Cu/Ge bilayer at 400°C for 30 minutes. Also a dominant orientation of Ge(111) is observable when amorphous precursor films are used. Hall measurements and cantilever beam bending show a considerable increase in hole mobility and longitudinal gauge factor, respectively

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 255
Copyright
Copyright © Materials Research Society 2000

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References

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