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Effect of Deposition-Induced Annealable Defects on Light-Induced Defect Generation in a-Si:H

Published online by Cambridge University Press:  01 January 1993

Jong-Hwan Yoon
Jong-Hwan Yoon*
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200-701, Korea
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Abstract

In this paper we present a method to determine the annealable defect density(ΔNann) present in hydrogenated amorphous silicon(a-Si:H). The effects of the annealable defects on the light-induced defect generation rate, saturated defect density (Nsat) and the change of defect density in the light-induced saturated state(ΔNsat) have been studied. Annealable defect density was varied by depositing samples at various substrate temperatures or by post-growth anneals of samples grown at low substrate temperatures. It is found that the generation rate, N satand ΔNsat are well correlated with ΔNann. In particular, the ΔNsat is found to follow a relation ΔNsat ≈ ΔNann. These results suggest that defect-related microscopic models are appropriate for light-induced metastability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 565
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977)Google Scholar
[2] Dersch, H. Stuke, J., and Beichler, J., Appl. Phys. Lett. 38, 456 (1981)Google Scholar
[3] Jackson, W. B., Proc. of Korea Science and Engineering Foundation/National Science Foundation Joint Seminar: The Physics of Semiconductor Materials and Applications, edited by Lee, C. and Paul, W.(Korea Science and Engineering, Seoul, 1987) pp. 47–63.Google Scholar
[4] Adler, D., Solar Cells 9, 133 (1983)Google Scholar
[5] Branz, H. M., Phys. Rev. B38, 7474 (1988)Google Scholar
[6] Carlson, D. E., Appl. Phys. A41, 305 (1986)Google Scholar
[7] Pantelides, S. T., Phys. Rev. B36, 3479 (1987)Google Scholar
[8] Park, H. R. Liu, J. Z., and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989)Google Scholar
[9] Smith, Z. E. Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S. and Chu, T. L., Appl. Phys. Lett. 50, 1521 (1987)Google Scholar
[10] Redfield, D., Phys. Lett. 48, 846(1986)Google Scholar
[11] Street, R. A. and Winer, K., Mater. Res. Soc. Symp. Proc. 149, 131 (1989)Google Scholar
[12] Stutzmann, M. Jackson, W. B., and Tsai, C. C., Phys. Rev. B32, 23 (1985)Google Scholar
[13] Redfield, D., Appl. Phys. Lett. 49, 1518 (1986)Google Scholar