Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-09T03:45:02.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  01 February 2011

Jaime Mimila Arroyo ,
Michel Barbé ,
François Jomard ,
Dominique Ballutaud ,
Jacques Chevallier ,
Marie-Antoinette Poisson ,
Sylvain Delage ,
Christian Dua ,
Yvon Cordier  and
Maxime Hugues
...Show all authors
Jaime Mimila Arroyo
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
Michel Barbé
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
François Jomard
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
Dominique Ballutaud
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
Jacques Chevallier
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France.
Marie-Antoinette Poisson
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France.
Sylvain Delage
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France.
Christian Dua
Affiliation:
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France.
Yvon Cordier
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Maxime Hugues
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Fabrice Semond
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Franck Natali
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Philippe Lorenzini
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Jean Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Parc de Sophia-Antipolis, Rue B.Grégory, 06560 Valbonne, France.
Get access

Abstract

We have studied the influence of a deuterium diffusion on the electrical characteristics of the 2D gas present in AlGaN/GaN heterostructures. The deuterium diffusion is performed by exposing the structures to a rf remote deuterium plasma. We find that both the sheet carrier concentration and the electron mobility decrease and that these effects are partly reversible under thermal annealing. These results suggest that deuterium behave as acceptors in the 2D gas region. The negatively charged deuterium act as additional scattering centers for electrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.31
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E. and Freitas, J.A., Solid State Electron. 41, 1549 (1997).Google Scholar
2 Binari, S.C., Klein, P.B. and Kazior, T.E., Proc. IEEE 90, 1048 (2002).Google Scholar
3 Trassaert, S., Boudart, B., Gaquière, C., Theron, D., Crosnier, Y., Huet, F. and Poisson, M.A., Electron. Lett. 35, 1386 (1999).Google Scholar
4 Greene, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R. and Eastman, L.F., IEEE Electron Device Lett. 21, 268 (2000).Google Scholar
5 Rumyantsev, S.L., Pala, N., Shur, M.S., Borovitskaya, E., Dmitriev, A.P., Levinshtein, M.E., Gaska, R., Khan, M.A., Yang, J., Hu, X. and Simin, G., IEEE Trans. Electron. Devices 48, 530 (2001).Google Scholar
6 Chevallier, J. and Pajot, B., Solid State Phenomena 85-86, 203 (2002).Google Scholar
7 Götz, W., Johnson, N.M., Bour, D.P., McCluskey, M.D. and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
8 Hierro, A., Ringel, S.A., Hansen, M., Speck, J.S., Mishra, U.K. and DenBaars, S.P., Appl. Phys. Lett. 77, 1499 (2000).Google Scholar
9 Jung, W.H., Kang, T.W. and Kim, T.W., Jpn. Journ. Appl. Phys. 41, L509 (2002).Google Scholar
10 Neugebauer, J. and Walle, C.G. Van de, Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
11 Cordier, Y., Hughes, M., Lorenzini, P., Semond, F., Natali, F. and Massies, J., Phys. Stat. Sol. (c) (2005) (in press).Google Scholar
12 Gurusinghe, M.N. and Andersson, G., Phys. Rev. B 67, 235208 (2003).Google Scholar
13 Ibbetson, J.P., Fini, P.T., Ness, K.D., DenBaars, S.P., Speck, J.S. and Mishra, U.K., Appl. Phys. Lett. 77, 250 (2000).Google Scholar
14 Jogai, B., J. Appl. Phys. 93, 1631 (2003).Google Scholar