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Effect of Heavy Doping on the Nucleation and Growth of Bulk Stacking Faults in Silicon

Published online by Cambridge University Press:  21 February 2011

C. W. Pearce ,
T. Kook  and
R. J. Jaccodine
C. W. Pearce
Affiliation:
AT&T Technology Systems, Allentown, PA 18103;
T. Kook
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015.
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015.
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Abstract

The effect of heavily doping silicon3with boron (up to 9.0×19/cm3) or antimony and arsenic (up to 1.0×19/cm3) on the nucleation and growth of bulk stacking faults (BSF) was investigated by the use of three-step heat treatment; 700°C-24 hrs., 900 °C 24 hrs., and 1050 °C up to 48 hrs.

The length and density of BSF were determined by optical microscopy after a Secco or Schimmel etch of cleaved specimens. From the effect of heavy doping on the density of BSF we imply the nucleation rate is doping level dependant. The effect of the low temperature (700°C) heat treatment time on the relationship between the density and the length of BSF indicates that the growth of BSF may be a supply-limited process. The effect of a high temperature (1300°C) oxygen dispersion treatment was also investigated. The results are analyzed in terms of a vacancy model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 231
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Yaney, D. S. and Pearce, C. W., IEDM Tech. Digest, p. 236 (1981).Google Scholar
2. Rozgonyi, G. A., Deysher, R. P. and Pearce, C. W., J. Electrochemical Society 123, 1910 (1976).10.1149/1.2132722Google Scholar
3. Tan, T. Y., Gardner, E. E. and Tice, W. K., Appl. Phys. Lett. 30, 175 (1977).10.1063/1.89340Google Scholar
4. de Kock, A. J. R., Stacy, W. T. and van de Wijgert, W. M., Appl. Phys. Lett. 39, 611 (1979).10.1063/1.90863Google Scholar
5. de Kock, A. J. R. and Wijgert, W. M. van de, J. Crystal Growth, 49, 718 (1980).10.1016/0022-0248(80)90299-7CrossRefGoogle Scholar
6. Pearce, C. W. and Rozgonyi, G. A., “VLSI Science and Technology -1982”, edited by Dell'Oco, C. J.. and Bullis, W. M., The Electrochemical Society, Pennington, N.J., 1982, p. 53.Google Scholar
7. Rozgonyi, G. A., Jaccodine, R. J. and Pearce, C. W., Defects in Semiconductors #2, edited by Mahajan, S. and Corbett, J. W., The Materials Research Society, Pittsburgh, PA, 1982, p. 117.Google Scholar
8. Dyson, W., et al “Proceedings of the Symposium on Defects in Silicon”, edited by Bullis, W. M. and Kimmerling, L. C., The Electrochemical Society, Pennington, N.J., 1983, p. 246.Google Scholar
9. Tsuya, H., Kondo, Y. and Kanamori, M., Jap. J. Appl. Phys. 22, L16 (1983).10.1143/JJAP.22.L16Google Scholar
10. Rozgonyi, G. A. and Pearce, C. W., Appl. Phys. Lett. 31, 343 (1977).10.1063/1.89693Google Scholar
11. Yatsurugi, Y., et al J. Electrochemical Society 120, 975 (1973).10.1149/1.2403610CrossRefGoogle Scholar
12. Mikkelsen, J. C. Jr. “Proceedings of the Symposium on Defects in Silicon”, op. cit. p. 95.Google Scholar
13. Graff, K., et al Solid State Elec. 16, 887 (1973).10.1016/0038-1101(73)90095-6CrossRefGoogle Scholar
14. Baghdadi, A., “Proceedings of the Symposium on Defects in Silicon”, op. cit. p. 293 and other papers same proceedings.Google Scholar
15. Fair, R. B., J. Appl. Phys. 54, 388 (1983).10.1063/1.331714CrossRefGoogle Scholar
16. Pearce, C. W., “VLSI Technology”, edited by Sze, S. M., Hill, McGraw, N.Y., 1983, Chapter 2.Google Scholar
17. Jaccodine, R. J. and Pearce, C. W., “Proceedings of the Symposium on Defects in Silicon”, edited by Bullis, W. M. and Kimmerling, L. C., The Electrochemical Society, Pennington, N.J., 1983, p. 115.Google Scholar
18. Jastryebski, L., et al J. Electrochemical Society 124, 1638 (1982).10.1149/1.2124224CrossRefGoogle Scholar
19. Lin, W. and Hill, D. W., “Silicon Processing”, Gupta, D. C., editor, ASTM, Philadelphia, PA, 1983, p. 29.Google Scholar
20. Pearce, C. W., Jaccodine, R. J., Filo, A. J. and Lin, W., paper submitted to Applied Physics Letters.Google Scholar
21. Van Vechten, J. A. and Thurmond, C. D., Phy. Rev. B, 14, 3551 (1976).10.1103/PhysRevB.14.3551Google Scholar