Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-27T16:10:44.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

Published online by Cambridge University Press:  15 February 2011

Daewon Kwon ,
J. David Cohen ,
Brent P. Nelson  and
Eugene Iwaniczko
Daewon Kwon
Affiliation:
University of Oregon, Department of Physics, Eugene, OR 97403
J. David Cohen
Affiliation:
University of Oregon, Department of Physics, Eugene, OR 97403
Brent P. Nelson
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 – 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 – 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 301
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mahan, A. H., Carapella, J., Nelson, B. P., and Crandall, R. S., J. Appl. Phys. 69, 6728 (1991)Google Scholar
2. Papadopulos, P., Scholz, A., Bauer, S., Schröder, B., and Oechsner, H., J. Non-Cryst. Solids 164–166, 87 (1993)Google Scholar
3. Molenbroek, E. C., Mahan, A. H., Johnson, E. J., and Gallagher, A. C., MRS Symp. Proc., Vol. 336, 43 (1993)Google Scholar
4. Stutzmann, M., Jackson, W. B., and Tsai, A. C., Phys. Rev. B 32, 23 (1985)Google Scholar
5. Zafar, S. and Schiff, E. A., Phys. Rev. B 40, 5235 (1989)Google Scholar
6. Santos, P. V., Johnson, N. M., and Street, R. A., Phys. Rev. Lett. 67, 2686 (1991)Google Scholar
7. Cohen, J. D. and Gelatod, A. V., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), p. 475.Google Scholar
8. Michelson, C. E., Gelatos, A. V., and Cohen, J. D., Appl. Phys. Lett. 47, 412 (1985)Google Scholar
9. Unold, T., Hautala, J., and Cohen, J. D., Phys. Rev. B 50, 16985 (1994)Google Scholar
10. Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981)Google Scholar