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Effect of Semiconductor and Dye Interfacial Properties in Dye-Sensitized Solar Cells

Published online by Cambridge University Press:  17 March 2011

Jin-An He ,
Ravi Mosurkal ,
Jayant Kumar ,
Lian Li ,
K. G. Chittibabu  and
Lynne A. Samuelson
Jin-An He
Affiliation:
Center for Advanced Materials, University of Massachusetts Lowell, Lowell, MA 01854
Ravi Mosurkal
Affiliation:
Center for Advanced Materials, University of Massachusetts Lowell, Lowell, MA 01854
Jayant Kumar
Affiliation:
Center for Advanced Materials, University of Massachusetts Lowell, Lowell, MA 01854
Lian Li
Affiliation:
Molecular Technologies Inc., Westford, Massachusetts 01886
K. G. Chittibabu
Affiliation:
Molecular Technologies Inc., Westford, Massachusetts 01886
Lynne A. Samuelson
Affiliation:
Natick Soldier Center, U.S. Army Soldier & Biological Chemical Command, Natick, MA 01760
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Abstract

The back recombination processes of electrons from the semiconductor to the oxidized dye and the oxidized redox species can dramatically reduce the efficiency of conventional dyesensitized solar cells (DSSCs). In this work, we have used the electrostatic layer-by-layer (ELBL) assembly technique to specifically manipulate and control the interface between the semiconductor and adsorbed dye layers in DSSCs to potentially minimize this recombination behavior. The interfacial modification has been achieved by applying different combinations and thicknesses of polyelectrolytes using the ELBL method and the performance of the cells has been monitored by measuring the I-V characteristics and the efficiency of the solar cells. The results indicate that an ultrathin polyelectrolyte film, on the order of a few Angstroms, between the semiconductor and the dye layer plays a crucial role on the performance of the solar cell. More specifically, the efficiencies of the DSSCs do not show any improvement after the interfacial treatment when compared to untreated samples. Surprisingly, the efficiency of the cells decreases to some degree, depending on the thickness of the polyelectrolyte films. This suggests that incorporation of a thin (several Angstroms) passive layer between the semiconductor and dye layer in these devices results in an increased resistance of the device and do not significantly reduce the back electron recombination as was originally anticipated. These results show interesting mechanistic information regarding the interfacial interactions of semiconductor/dye interfaces in DSSCs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 710: Symposia DD – Polymer Interfaces and Thin Films , 2001 , DD12.12.1
Copyright
Copyright © Materials Research Society 2002

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References

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