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The Effect of Temperature on the Efficiency of Nitride-based Multi-quantum well Light-emitting Diodes

Published online by Cambridge University Press:  31 January 2011

Oskari Heikkilä ,
Jani Oksanen  and
Jukka Tulkki
Oskari Heikkilä
Affiliation:
oskari.heikkila@tkk.fi, Helsinki University of Technology, BECS, Espoo, Finland
Jani Oksanen
Affiliation:
jani.oksanen@lce.hut.fi, Helsinki Univ. of Technology, po. box 2200, espoo, 02015-TKK, Finland
Jukka Tulkki
Affiliation:
jukka.tulkki@hut.fi, TKK, BECS, Espoo, Finland
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Abstract

We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

Keywords

nitrideluminescenceIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1229: Symposium LL – Multiphysics Modeling in Materials Design , 2009 , 1229-LL09-06
Copyright
Copyright © Materials Research Society 2010

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