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Effect of the Surface Structure of Thin Layers on Their Reactivity

Published online by Cambridge University Press:  01 February 2011

Fedor Dultsev
Fedor Dultsev*
Affiliation:
ebn54@ngs.ru, Institute of Semiconductor Physics, SB RAS, Lavrentiev ave., 13, Novosibisrk, 630090, Russian Federation
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Abstract

Changes of the electron properties of surface atoms of silicon dioxide film caused by the adsorption of donor-type gas-phase molecules (H2O, O2, NH3, HF) were modeled with the help of semiempirical methods and molecular mechanics. It was shown that the adsorption capacity and reactivity of the layers depend on the Si-O-Si bond angle. The results of calculations are in good agreement with the experimental data and confirm our hypothesis concerning the rearrangement of the surface layer stimulated by the adsorbed molecule.

Keywords

thin filmdielectricporosity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-22
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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