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Effect of W Substitution in Strontium Bismuth Tantalate Ferroelectric Ceramics: Enhanced Ferroelectric Properties

Published online by Cambridge University Press:  01 February 2011

Indrani Coondoo ,
Neearj Panwar ,
Ashok Biradar  and
Arun Jha
Indrani Coondoo
Affiliation:
indrani_coondoo@yahoo.com, National Physical Laboratory, New Delhi, India
Neearj Panwar
Affiliation:
neeraj.panwar@gmail.com, University of Puerto Rico, San Juan, United States
Ashok Biradar
Affiliation:
abiradar@mail.nplindia.ernet.in, National Physical Laboratory, New Delhi, India
Arun Jha
Affiliation:
dr_ak_jha@yahoo.co.in, Delhi Technological University, New Delhi, India
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Abstract

Tungsten (W)-substituted SBT ceramics [SrBi2(Ta1-xWx)2O9; 0.0 ≤ x ≤ 0.20] were synthesized by solid state reaction method using different sintering temperatures (1100 οC, 1150 οC, 1200 οC and 1250 οC). W substitution is found to significantly affect the electrical properties of SBT, including dielectric permittivity, Curie temperature, and ferroelectricity. Dielectric constant (εr) and the Curie temperature (Tc) increase with increasing W content. The dielectric loss reduces significantly with increase in W concentration. The maximum Tc of ~ 390 οC is observed in the sample with x = 0.20 as compared to ~ 320 οC for the pure sample when sintered at 1200 οC. The peak ε increases from ~ 270 in the sample with x = 0.0 to ~ 700 for the composition with x = 0.20, when sintered at 1200 οC. All the tungsten-substituted ceramics have higher 2Pr than that in the pristine sample. The maximum 2Pr (~25 μC/cm2) is obtained in composition with x = 0.05 sintered at 1200 οC. These effects have been interpreted based on the model of the recovery of oxygen vacancies upon W substitution. Such compositions with low loss and high Pr values should be excellent materials for highly stable ferroelectric memory devices.

Keywords

ceramicdielectric propertiesferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G16-02
Copyright
Copyright © Materials Research Society 2010

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