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The effects of Methane Concentration on diamond nucleation and growth during bias enhanced nucleation on 3C-SiC(100) surfaces

Published online by Cambridge University Press:  01 February 2011

Jean-Charles Arnault ,
Samuel Saada ,
Luciana Intiso  and
Philippe Bergonzo
Jean-Charles Arnault
Affiliation:
arnault@drecam.cea.fr, CEA Saclay, DSM/DRECAM/SPCSI, bâtiment 462, GIF SUR YVETTE, 91191, France, (33) 1 69 08 71 02, (33) 1 69 08 84 46
Samuel Saada
Affiliation:
samuel.saada@cea.fr, CEA Saclay, LIST/SSTM/DETECS/LTD, bâtiment 451, Gif sur Yvette, 91191, France
Luciana Intiso
Affiliation:
luciana.intiso@gmail.com, CEA Saclay, DSM/DRECAM/SPCSI, bâtiment 462, Gif sur Yvette, 91191, France
Philippe Bergonzo
Affiliation:
philippe.bergonzo@cea.fr, CEA Saclay, LIST/SSTM/DETECS/LTD, bâtiment 451, Gif sur Yvette, 91191, France
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Abstract

The methane effects on nucleation and growth of diamond during bias enhanced nucleation treatment have been studied on 3C-SiC (100) surfaces. At low methane concentration of 1%, no diamond nucleation was observed, whether at 3 %, nucleation density values as high as 4×1010/cm2 were reached. A further increase of the methane concentration up to 5% induces a significant enhancement of the diamond nucleation density that was observed only slightly higher at 7×1010/cm2. Moreover, the Field Emission Gun Scanning Electron Microscopy (FEG-SEM) pictures well emphasized that the methane content affects both the nucleation and growth mechanisms.

Keywords

nucleation & growthdiamondx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J08-03
Copyright
Copyright © Materials Research Society 2007

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References

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