Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T21:18:13.954Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

Published online by Cambridge University Press:  21 February 2011

Susan Z. Hua ,
L. Salamanca-Riba ,
M. Wuttig  and
P. K. Soltani
Susan Z. Hua
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
M. Wuttig
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
P. K. Soltani
Affiliation:
Quantex Corporation, Rockville, MD 20850
Get access

Abstract

The microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 359
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Onisawa, K., Taguchi, K., Fuyama, M., Tamura, K., Abe, Y., and Ono, Y. A., J. Electrochem. Soc. 136, 2736 (1989).Google Scholar
[2] Onisawa, K., Fuyama, M., Taguchi, K., Tamura, K., and Ono, Y. A., J. Electrochem. Soc: Solid State Science and Tech. 135, 2631 (1988).Google Scholar
[3] Tanaka, S., J. Crystal Growth, 101, 958 (1990).Google Scholar
[4] Kobayashi, H., Tanaka, S., Shanker, V., M. Shiiki and Deguchi, H., J. Crystal Growth, 72, 559 (1985).Google Scholar
[5] Hua, Z., Salamanca-Riba, L., Wuttig, M., and Soltani, P. K., J. Opt. Soc. America, B. (in the press).Google Scholar
[6] Lehmann, W. and Ryan, F. M., J. Electrochem. Soc.: Solid State Science, 118, 477 (1971).Google Scholar
[7] Yamashita, N. and Asano, S., J. Phys. Soc. Jpn. 56, 352 (1987).Google Scholar
[8] Allen, J. W., Johansson, L. I., Lindau, I. and Hagstrom, S. B., Phys. Rev. B. 21, 1335 (1980).Google Scholar
[9] Wertheim, G. K. and Crecelius, G., Phys. Rev. Lett. 40, 813 (1978).Google Scholar
[10] Lehmann, W., J. Lumin. 5, 87 (1972).Google Scholar
[11] Thornton, J. A., Ann. Rev. Mater. Sci. 7, 239 (1977).Google Scholar
[12] Tanaka, K., Mikami, A., Ogura, T., Taniguchi, K., Yoshida, M., and Nakajima, S., Appl. Phys. Lett. 48, 1730 (1986).Google Scholar