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Effects of Particle Concentration in CMP

Published online by Cambridge University Press:  18 March 2011

Wonseop Choi ,
Seung-Mahn Lee  and
Rajiv K. Singh
Wonseop Choi
Affiliation:
Department of Material Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, Florida 32611-6400, USA
Seung-Mahn Lee
Affiliation:
Department of Material Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, Florida 32611-6400, USA
Rajiv K. Singh
Affiliation:
Department of Material Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, Florida 32611-6400, USA
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Abstract

This paper reports on characterization of the surface coverage of particles by in-situ lateral friction force measurement during chemical mechanical polishing. The lateral friction force apparatus was made to operate close to real CMP conditions. For these experiments a sapphire wafer of constant surface roughness was used. For both 2psi and 4psi down force we observed increase in lateral friction forces with increasing solid loading. The lateral friction forces have been found to be significantly dependent on the contact area at the wafer-pad-slurry interface, thus showing that in-situ dynamic friction force changes in the surface coverage of particles. From these results, we conclude that the enhancement of frictional force is due to increased contact area at the wafer-pad-slurry interfaces. The lateral friction force measurement can provide an understanding of wafer-pad-slurry interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M5.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Steigerwald, J. M., Murarka, S.P. and Gutmann, R.J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, Inc., New York (1997).Google Scholar
2. Jairath, R., Farkas, J., Huang, C.K., Stell, M. and Tzeng, S-M., Solid State Technol., 37, 71 (1994).Google Scholar
3 Brown, N. and Cook, L., Paper TuB-A4, Tech. Digest Topical Meeting on the Science of Polishing, Optical Society of America, 17 April 1984.Google Scholar
4.M.Bielmann, mahajan, U. and Singh, R.K., Electrochem. Solid-State Lett., 2(8), 401–403 (1999).Google Scholar
5. Mahajan, U., Bielmann, M. and Singh, R.K., Electrochem. Solid-State Lett., 2(2), 80 (1999).10.1149/1.1390741Google Scholar
6. Mahajan, U., Bielmann, M. and Singh, R.K., Mat. Res. Soc. Symp. Proc. 566, 27 (1999).Google Scholar
7. Pohl, M.C. and Griffiths, D.A., J. of Electronic Mat. 25(10) (1996).10.1007/BF02655584Google Scholar
8. Cook, Lee M., J. of Non-crystalline Solids 120, 152 (1990).10.1016/0022-3093(90)90200-6Google Scholar
9. Brown, N.J., Baker, P.C. and Maney, R.T., Proc. SPIE 306, 42 (1981).10.1117/12.932717Google Scholar