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Effects of Radiation Induced Defects on Laser-Induced Breakdown in SiO2

Published online by Cambridge University Press:  25 February 2011

M. J. Soileau ,
Nastaran Mansour ,
Edesly Canto  and
D. L. Griscom
M. J. Soileau
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Nastaran Mansour
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Edesly Canto
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
D. L. Griscom
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

The effects of radiation damage on bulk laser-induced breakdown in Si02 were studied. Samples studied included Spectrasil A, B, and WF (water free). Measurements of laser-induced breakdown were conducted with 532 and 1064 nm laser pulses of approximately 30 nsec duration. Reductions of up to 50% in the laser-ind ced breakdown threshold were observed at 530 nm for samples exposed to 108 rads of γ-radiation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 205
Copyright
Copyright © Materials Research Society 1986

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References

1. Friebele, E. J. and Griscom, D. L., ”Radiation Effects in Glass,” Glass II, Vol.17, Academic Press, 257, 1979.Google Scholar
2. Soileau, M. J., Williams, William E., Van Stryland, Eric W., Boggess, Thomas F., and Smirl, Arthur L., Opt. Eng. 22, 424 (1983).CrossRefGoogle Scholar
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5. Soileau, M. J., Ph.D. Dissertation, University of Southern California, 1979, unpublished.Google Scholar