Hostname: page-component-669899f699-qzcqf Total loading time: 0 Render date: 2025-04-29T05:07:57.373Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Surfactants N and Br on Ordering in GaInP

Published online by Cambridge University Press:  01 February 2011

D.C. Chapman ,
A.D. Howard ,
L. Rieth ,
R.R. Wixom  and
G.B Stringfellow
D.C. Chapman
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112
A.D. Howard
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112
L. Rieth
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112
R.R. Wixom
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112
G.B Stringfellow
Affiliation:
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah84112
Get access

Abstract

Formation of the CuPt ordered structure during the organometallic vapor phase epitaxial (OMVPE) growth of GaInP has significant effects on the electrical and optical properties, necessitating control of ordering. Formation of the CuPt structure is thermodynamically driven by the surface structure during growth. This has led to the study of the use of surfactants as a way of controlling ordering. To date, these studies have centered on the group V elements isoelectronic with P. Sb and Bi are both larger than P. This leads to less ordering. N, on the other hand, is smaller than P, which makes it potentially interesting. The other disordering mechanism, observed for Te as a surfactant in GaInP, is kinetic. Rapid step propagation leads to a reduction in ordering. This suggests another potentially interesting class of surfactants, the group VII elements, such as Br, that have been reported to increase the step velocity during OMVPE growth. This paper describes the results of the addition of the surfactants N and Br during the OMVPE growth of GaInP. Addition of N (DMHy) results in a clear reduction in order parameter, due to thermodynamic effects. The addition of Br (CBr4) is also observed to systematically decrease the amount of CuPt ordering and is found to correspond to a significant roughening of the surface, which is postulated to be the origin of the reduction in order parameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T10.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Stringfellow, G.B. in Thin Films: Heteroepitaxial Systems, ed. Liu, W.K. and Santos, M., (World Scientific Publishing, Singapore, 1998), Chapter 2.Google Scholar
2. Wei, S.H., and Zunger, A., Phys. Rev. B 39, 3279 (1989),Google Scholar
3. Ernst, P., Geng, C., Scholz, F., Schweizer, H., Zhang, Y., and Mascarenhas, A., Appl. Phys. Lett. 67, 2347 (1997).Google Scholar
4. Stringfellow, G.B., J. Crystal Growth, 27, 21 (1974).Google Scholar
5. Ho, I. H. and Stringfellow, G. B., Crys, J..Growth 178, 1 (1997).Google Scholar
6. Su, L.C., Ho, I.H., and Stringfellow, G.B., J. Appl. Phys. 75, 5135 (1994);Google Scholar
Su, L.C., Ho, I.H., and Stringfellow, G.B., J. Crystal Growth 146, 558 (1995).Google Scholar
7. Shurtleff, J.K., Lee, R.T., Fetzer, C.M., and Stringfellow, G.B., Appl. Phys. Lett. 75, 1914 (1999).Google Scholar
8. Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., Seong, T.Y., J. Appl. Phys. 88, 4429 (2000).Google Scholar
9. Stringfellow, G.B., Shurtleff, J.K., Lee, R.T., Fetzer, C.M., and Jun, S.W., J. Crystal Growth 221, 1 (2000).Google Scholar
10. Kim, S.I., Kim, M.S., Hwang, S.M.. Min, B.D., Son, C.S., Kim, E.K., and Min, K.K., J. Crystal Growth 170, 665 (1997).Google Scholar
11. Chapman, D.C., Rieth, L.W., Stringfellow, G.B., Lee, J.W., and Seong, T.Y., J. Appl. Phys. (to be published).Google Scholar
12. Murata, H., Ho, I.H., Su, L.C., Hosokawa, Y., and Stringfellow, G.B., J. Appl. Phys. 79, 6895 (1996).Google Scholar
13. Bykhovski, A. D. and Shur, M. S., Appl. Phys. Lett. 69, 2397 (1996);Google Scholar
Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L., and Ploog, K. H., Phys. Rev. B 52, R2253 (1995);Google Scholar
Yang, H., Brandt, O., Wassermeier, M., Behrand, J., Schonherr, H. P., and Ploog, K. H., Appl. Phys. Lett. 68, 244 (1996);Google Scholar
Brandt, O., Yang, H., and Ploog, K. H., Phys. Rev. B 54, 4432 (1996).Google Scholar
14. Murata, H., Lee, S. H., Ho, I. H., and Stringfellow, G. B., J. Vac. Sci. Technol. B 14, 3013 (1996).Google Scholar
15. Fu, Q., Li, L., Begarney, M.J., Han, B.K., Law, D.C., and Hicks, R.F., J. Phys. IV France 9, Pr8–3 (1999);Google Scholar
Howard, A.D., Rieth, L., Chapman, D.C., Wixom, R.R., Stringfellow, G.B., Kim, B.J., and Seong, T.Y., J. Appl. Phys. (accepted for publication).Google Scholar