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Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

Published online by Cambridge University Press:  15 February 2011

L. J. Chen  and
T. T. Chang
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, (Taiwan)
T. T. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, (Taiwan)
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Abstract

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.

For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 183
Copyright
Copyright © Materials Research Society 1982

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References

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