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EFM Study on Ge Island: Carrier Charge and Storage Effect

Published online by Cambridge University Press:  01 February 2011

Zhen Lin ,
Pavel Brunkov ,
Xueying Ma ,
Franck Bassani  and
Georges Bremond
Zhen Lin
Affiliation:
zhen.lin@insa-lyon.fr, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
Pavel Brunkov
Affiliation:
brunkov@mail.ioffe.ru, Technical Institute of the Russian Academy of Sciences, Saint-Pétersbourg, Russian Federation
Xueying Ma
Affiliation:
ma_shirley1@hotmail.com, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Lyon, France
Franck Bassani
Affiliation:
franck.bassani@im2np.fr, Institut Matériaux Microélectronique Nanosciences de Provence, Marseille, France
Georges Bremond
Affiliation:
georges.bremond@insa-lyon.fr, Institut National des Sciences Appliquées, Institut des Nanotechnologies de Lyon, Villeurbanne, France
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Abstract

In this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

Keywords

electrical propertiesGenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1260: Symposium T – Photovoltaics and Optoelectronics from Nanoparticles , 2010 , 1260-T10-44
Copyright
Copyright © Materials Research Society 2010

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