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Electric Field Effects on the Optical Properties of InxGa1-xAs/GaAs Strained Quantum Wells and Superlattices

Published online by Cambridge University Press:  28 February 2011

K. Gibb ,
C. Lacelle ,
A.P. Roth ,
B. Soucail ,
N. Dupuis ,
P. Voisin ,
B.Y. Hua  and
E. Fortin
K. Gibb
Affiliation:
National Research Council, 100 Sussex Drive, Ottawa, Canada Université d’Ottawa, Ottawa, Canada
C. Lacelle
Affiliation:
National Research Council, 100 Sussex Drive, Ottawa, Canada
A.P. Roth
Affiliation:
National Research Council, 100 Sussex Drive, Ottawa, Canada Université d’Ottawa, Ottawa, Canada
B. Soucail
Affiliation:
Ecole Normale Supérieure, 24 Rue Lhomond, Paris, France
N. Dupuis
Affiliation:
Ecole Normale Supérieure, 24 Rue Lhomond, Paris, France
P. Voisin
Affiliation:
Ecole Normale Supérieure, 24 Rue Lhomond, Paris, France
B.Y. Hua
Affiliation:
Beijing Polytechnic University, Beijing, China Université d’Ottawa, Ottawa, Canada
E. Fortin
Affiliation:
Université d’Ottawa, Ottawa, Canada
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Abstract

We have used photoluminescence excitation and photocurrent spectroscopy to investigate the electronic properties of InxGa1-xAs/GaAs strained layer quantum wells and superlattices. In quantum wells, sharp excitonic transitions between discrete energy levels are observed both in excitation and near flatband photocurrent spectra whereas superlattices show heavy-hole to conduction miniband transitions at the Brillouin mini-zone centre and edge, directly giving the electron miniband width. Applying a longitudinal electric field to the quantum wells produces a red shift of the excitons due to the quantum confined Stark effect, while in superlattices, photocurrent spectra at finite applied electric fields show for the first time in this system, the effects of Wannier-Stark quantization. The analysis of the spectra provides a precise determination of the band offset.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 667
Copyright
Copyright © Materials Research Society 1990

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