Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T12:50:34.474Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Activation of Heavily Doped Arsenic Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

J. Said ,
H. Jaouen ,
G. Ghibaudo ,
I. Stoemenos  and
P. Zaumseil
J. Said
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
H. Jaouen
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
G. Ghibaudo
Affiliation:
Laboratoire de Physique des Composants à Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, Frances
I. Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Greece
P. Zaumseil
Affiliation:
Akademie der Wissenchaften der DDR, Institut fur Halbeiterphysik, Frankfurt, Krosingstr 2, 1200-Frankfurt, GDR
Get access

Abstract

The combination of electrical, Transmission Electron Microscopy and Triple Crystal X-ray Diffraction measurements allow us to separate the existence of a local impurity activation process from the amorphous- crystal transformation. The local process occurs in the highly damaged surface layer induced by the arsenic implantation and is efficient well below the Solid Phase Epitaxy transition temperature. It is suggested that point defect migration should play an important role in the electrical impurity activation at low annealing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 599
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ehrstein, J.R., in Nondestructive Evaluation of Semiconductors Materials and Devices, edited by Zemel, J. N. (Plenum Press, 1978).Google Scholar
2. Christofidès, C., Ghibaudo, G. and Jaouen, H., Rev. Phys. Appl., 22, 407 (1987).10.1051/rphysap:01987002206040700Google Scholar
3. Fuller, C.S., in Defects Interactions in Semiconductors, American Chemical Society Monograph Series, No 140, edited by Hannay, N. B. (Reinhold Publishing Corporation, New York, 1959) p. 209.Google Scholar
4. Zaumseil, P., Phys. Stat. Sol. (a), 91, K31 (1985).10.1002/pssa.2210910147Google Scholar
5. Zaumseil, P., Winter, U., Cembali, F., Servidori, M. and Sourek, Z., Phys. Stat. Sol. (a), 100, 95 (1987).10.1002/pssa.2211000110Google Scholar
6. Boltaks, B., Diffusion et Défauts Ponctuels dans les Semiconducteurs (Mir, Moscou, 1977).Google Scholar
7. Watkins, G.D. and Corbett, J.W., Phys. Rev. A, 134, 1359 (1964).10.1103/PhysRev.134.A1359Google Scholar
8. Kokorowski, S.A., Olson, G.L. and Hoss, L.D., J. Appl. Phys., 53, 921 (1982).10.1063/1.330561CrossRefGoogle Scholar
9. Picraux, S.T., Defects in semiconductors, edited by Narayan, J. and Tan, T. Y. (North Holland, New York, 1981) p. 135.Google Scholar