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Electrical and Photoluminescence Properties of Mg+ and C+ Implanted Acceptors in InP.

Published online by Cambridge University Press:  25 February 2011

A.C. Beye ,
A. Yamada ,
A. Shimizu ,
H. Shibata ,
H. Tanoue ,
K.M. Mayer ,
H. Sugiyama ,
K. Kamijoh ,
T. Oda  and
O. Arriga
...Show all authors
A.C. Beye
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
A. Yamada
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
A. Shimizu
Affiliation:
Meiji University, Higashi-mita 1-1-1, Tama-ku, Kawasaki-shi, 214 Japan.
H. Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
H. Tanoue
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
K.M. Mayer
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
H. Sugiyama
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
K. Kamijoh
Affiliation:
O. T. R. L., 5-5 Tokodai, Tsukuba-shi, Ibaraki-ken, 300-26 Japan.
T. Oda
Affiliation:
Nippon Mining Co., Ltd., 3-17-35 Niizo-Minami, Toda-shi, 335 Japan.
O. Arriga
Affiliation:
Nippon Mining Co., Ltd., 3-17-35 Niizo-Minami, Toda-shi, 335 Japan.
I. Akiyama
Affiliation:
N. I. T., Gakuendai 4-1, Miyashiro-cho, MinamiSaitama-gun, 345 Japan.
N. Kutsuwada
Affiliation:
N. I. T., Gakuendai 4-1, Miyashiro-cho, MinamiSaitama-gun, 345 Japan.
T. Matsumori
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan.
S. Uekusa
Affiliation:
Meiji University, Higashi-mita 1-1-1, Tama-ku, Kawasaki-shi, 214 Japan.
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki-ken, 305 Japan.
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Abstract

Implantation of Mg+ and C+ ions is carried out in bulk InP substrates using single or several energies up to 400 keV. The net carrier concentration profile at 300K is measured by capacitance-voltage (C-V) method. The ground and excited states binding energies of Mg and C acceptors are determined by low-temperature selective excitation of photoluminescence (PL). Additional sharp exciton-Iike emissions are detected after annealing of the samples. Their intensity is found to decrease with increasing Mg+ or C+ dose. Annealing-induced activation and/or formation of complex defect are the likely candidate mechanisms for the involved defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 139
Copyright
Copyright © Materials Research Society 1990

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