Low-density layers of SnO2 nanowires were produced using the vapor solid method and dry-pressed onto surface-oxidized Si-substrates equipped with a set of 39 parallel Pt-electrodes. Current-Voltage (I-V) characteristics of the segments between the electrodes were measured in ambient air at a substrate temperature of 300°C. Statistical analysis of the 38 I-V characteristics allows drawing conclusions, that only Schottky contacts between large nanowires and electrodes are significant for conductometry, and that they have very similar barrier characteristics. The statistical approach and its advantages are demonstrated. The clarity obtained concerning the roles of different resistivity mechanisms involved enables predictions of the nanowire net device behavior in applications, which is demonstrated on an instance of long-term stability examination of gas sensor arrays.