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Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide

Published online by Cambridge University Press:  21 March 2011

R. Mehandru ,
B.P. Gila ,
J. Kim ,
J.W. Johnson ,
K.P. Lee ,
B. Luo ,
A.H. Onstine ,
C. R. Abernathy ,
S.J. Pearton  and
F. Ren
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
B.P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
J.W. Johnson
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
K.P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
A.H. Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
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Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1cm-2was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.47.1
Copyright
Copyright © Materials Research Society 2002

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