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Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

Published online by Cambridge University Press:  01 February 2011

M. Yun ,
M. Arif ,
S. Gangopadhyay  and
S. Guha
M. Yun
Affiliation:
mynn3@mizzou.edu, University of Missouri, Department of Electrical and Computer Engineering, Columbia, MO, 65211, United States
M. Arif
Affiliation:
maa4y4@mizzou.edu, University of Missouri, Department of Physics, Columbia, MO, 65211, United States
S. Gangopadhyay
Affiliation:
gangopadhyays@missouri.edu, University of Missouri, Department of Electrical and Computer Engineering, Columbia, MO, 65211, United States
S. Guha
Affiliation:
guhas@missouri.edu, University of Missouri, Department of Physics, Columbia, MO, 65211, United States
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Abstract

Polyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

Keywords

electrical propertiespolymerdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M07-08
Copyright
Copyright © Materials Research Society 2006

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