Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T20:35:13.190Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Copper Silicide/Silicon Interfaces

Published online by Cambridge University Press:  03 September 2012

B.G. Svensson
B.G. Svensson*
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
Get access

Abstract

The electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 281
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weber, E.R., Appl. Phys. A 30, 1 (1983).CrossRefGoogle Scholar
2. Hall, R.N. and Racette, J.H., J. AppI. Phys. 35, 379 (1964)Google Scholar
3. Beeler, F., Andersen, O.K., and Scheffler, M., Phys. Rev. Lett. 55, 1498 (1985).Google Scholar
4. Fuller, C.S. and Severins, J., Phys Rev. 96, 21 (1954); C.J. Gallagher J. Phys. Chem. Solids 3, 82 (1957).Google Scholar
5. Chen, J.W. and Milnes, A.G., Ann. Rev. Mater. Sci. 10, 157 (1980).Google Scholar
6. Rothagi, A., Davis, J.R., Hopkins, R.H., Rai-Choudhury, P., McMullin, P.G. and McCormic, J.R., Sold State Electron. 23, 415 (1980).CrossRefGoogle Scholar
7. Cros, A., Aboelfotoh, M.O., and Tu, K.N., J. Appl. Phys. 67, 3328 (1990).Google Scholar
8. Aboelfotoh, M.O., Cros, A., Svensson, B.G., and Tu, K.N., Phys. Rev. B41, 9819 (1990).Google Scholar
9. Svensson, B.G. and Aboelfotoh, M.O., Mater. Sci. Forum 65–66, 253 (1990).Google Scholar
10. Aboelfotoh, M.O. and Svensson, B.G., Phys. Rev. B44, 12742 (1991).Google Scholar
11. Svensson, B.G., Aboelfotoh, M.O., and Lindström, J.L., Phys. Rev. Lett. 66, 3028 (1991).Google Scholar
12. Aboelfotoh, M.O. and Svensson, B.G., Semicond. Sci. Technol. 6, 647 (1991).Google Scholar
13. Tamulevicius, S., Svensson, B.G., Aboelfotoh, M.O., and Halldn, A., J. AppI. Phys. 71, 4212 (1992).Google Scholar
14. Svensson, B.G. and Aboelfotoh, M.O., Mater. Sci. Forum 83–87, 179 (1992).Google Scholar
15. Taubenblatt, M.A., Thomson, D., and Helms, C.R., Appl. Phys. Lett. 44, 895 (1984).Google Scholar
16. Aboelfotoh, M.O., Phys. Rev. B39, 5070 (1989).CrossRefGoogle Scholar
17. Rhoderick, E.H., Metal-Semiconductor Contacts (Clarendon, Oxford, 1980).Google Scholar
18. Arizumi, T. and Hirose, M., Japan. J. AppI. Phys. 8, 749 (1969).Google Scholar
19. Crowell, C.R., Sze, S.M., and Spitzer, W.G., Appl. Phys. Lett. 4, 91 (1964).CrossRefGoogle Scholar
20. Thanailakis, A., J. Phys. C: Solid State Phys. 8, 655 (1975).CrossRefGoogle Scholar
21. Saxena, A.N. Surf. Sci. 13, 151 (1969); J.D. Levine J. Appl. Phys. 42, 3991 (1971).Google Scholar
22. Crowell, C.R., Solid-State Electron. 20, 171 (1977).Google Scholar
23. Stalihofer, P., Huber, A., Blochl, P., and Schwenk, H., in Semiconductor Silicon 1990, edited by Huff, H.R., Barraclough, K.G. and Chickawa, J-i (Pennington, N.J., Electrochem. Soc., 1990), p. 1016.Google Scholar
24. Estreicher, S.K., Phys. Rev. B41, 5447 (1990).Google Scholar
25. Prescha, Th., Zundel, T., Weber, J., Prigge, H., and Gerlach, P., Mater. Sci. Eng. B4, 79 (1989).Google Scholar
26. Wagner, P., Hage, H., Prigge, H., Prescha, Th., and Weber, J., in Semiconductor Silicon 1990, edited by Huff, H.R., Barraclough, K.G. and Chickawa, J-i (Pennington, N.J., Electrochem. Soc., 1990), p. 675.Google Scholar
27. Ward, W.J. and Carroll, K.M., J. Electrochem. Soc. 129, 227 (1982).Google Scholar
28. Reichel, J. and Sevcik, S., Phys. Status Solidi A 103, 413 (1987).Google Scholar
29. Watkins, G.D. and Corbett, J.W., Phys. Rev. 138, A543 (1965).Google Scholar
30. Kimerling, L.C., in Radiation Effects in Semiconductors 1976, edited by Urli, N.B. and Corbett, J.W. (IOP Conference Proceedings No. 31, Institute of Physics, Bristol, 1977), p. 221.Google Scholar
31. Mooney, P.M., Cheng, L.J., Sfili, M., Gerson, J.D., and Corbett, J.W., Phys. Rev. B15, 3836, (1977).Google Scholar
32. Ferenczi, G., Londos, C.A., Pavelka, T., Somogyi, M., and Mertens, A., J. Appl. Phys. 63, 183 (1987).Google Scholar
33. Wang, K.L., Lee, Y.H., and Corbett, J.W., Appl. Phys. Lett. 33, 547 (1978).Google Scholar
34. Svensson, B.G. and Willander, M.A, J. Appl. Phys. 62, 2762 (1987).Google Scholar
35. Trombetta, J.M. and Watkins, G.D., Appl. Phys. Lett. 51, 1103 (1987).CrossRefGoogle Scholar
36. Ronay, M. and Schad, R.G., Phys. Rev. Lett. 64, 2042 (1990).Google Scholar
37. Car, R., Kelly, P.J., Oshiyama, A., and Pantelides, S.T., Phys. Rev. Lett. 52, 1814 (1984).Google Scholar
38. Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961); J.W. Corbett, G.D. Watkins, R.M. Chrenko and R.S. McDonald, Phys. Rev. 121, 1015 (1961).Google Scholar