Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-20T05:22:53.180Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range

Published online by Cambridge University Press:  21 February 2011

Joachim Zeller ,
Petr G. Eliseev ,
Philippe Sartori ,
Piotr Perlin  and
Marek Osiński
Joachim Zeller
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131-6081
Petr G. Eliseev
Affiliation:
On leave from P. N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia
Philippe Sartori
Affiliation:
On leave from Ecole Nationale Supérieure des Télécommunications, Paris, France
Piotr Perlin
Affiliation:
On leave from High Pressure Research Center, Warsaw, Poland
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131-6081
Get access

Abstract

Studies of electrical characteristics of nitride-based light emitting diodes (LEDs) are of interest as they can shed light on carrier transport across the p-n heterojunction. In addition, they provide a convenient way of investigating degradation processes associated with high electrical stress. We present electrical characteristics of Nichia NLPB500 blue LEDs based on AlGaN/InGaN/GaN material system in the temperature range of 9-340 K. Two components of current are identified. High-density current stress leads to diode degradation by shunt formation caused by metal electromigration. At 8 K, blue emission was observed at currents as small as 20 nA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 937
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64 (13), pp. 1687–1689 (1994); S. Nakamura, J. Cryst. Growth 145, pp. 911–917 (1994); S. Nakamura, J. Vac. Sci. & Technol. A13, 705 (1995).Google Scholar
2 Osiński, M. and Eliseev, P.G., Abstracts, Topical Workshop on ni-V Nitrides, Nagoya, Japan, 21–23 Sept. 1995, Paper C-5; P.G. Eliseev, M. Osiński,B. S. Phillips, P.-C. Chiu, G. Mohs, B. Fluegel, H. Giessenb, and N. Peyghambarian, Conf. Proc, LEOS ‘95 8th Annual Meeting, San Francisco, CA, Oct. 30 - Nov. 2, 1995, Paper OMP4.3, Vol. 2, pp. 104–105.Google Scholar
3 Barton, D.L., Zeller, J., Phillips, B.S., Chiu, P.-C., Askar, S., Lee, D.-S., Osiński, M. and Malloy, K. J., 1995 (33rd Annual) IEEE International Reliability Physics Proc., Las Vegas, NV, 4-6 April 1995, pp. 191–199.Google Scholar
4 Molnar, R.J., Lei, T., and Moustakas, T.D., Appl. Phys. Lett. 62 (1), pp. 72–74 (1993).Google Scholar
5 Yamasaki, S., Asamu, S., Shibata, N., Koike, M., Manabe, K., Tanaka, T., Amano, H., and Akasaki, I., Appl. Phys. Lett. 66 (9), pp. 1112–1113 (1995).Google Scholar