Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T18:11:50.481Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Property of Transparent TiO2:Nb / ZnO:Ga Layered Film

Published online by Cambridge University Press:  20 March 2014

Seiji Ichiyanagi ,
Yasuji Yamada  and
Shuhei Funaki
Seiji Ichiyanagi
Affiliation:
Department of Physics and Materials Science, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan.
Yasuji Yamada
Affiliation:
Department of Physics and Materials Science, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan.
Shuhei Funaki
Affiliation:
Department of Physics and Materials Science, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan.
Get access

Abstract

Nb-doped TiO2 (TNO) films, Ga-doped ZnO (GZO) films and TNO/GZO layered films were fabricated on glass substrates and electrical properties of TNO/GZO layered films were investigated in terms of interaction between TNO and GZO layers. By a thermal annealing in vacuum, the observed resistivity of the TNO/GZO layered films was lower than that of the single layered films fabricated and annealed at the same conditions. The resistivity reduction observed in the layered structure is not explained by the parallel connection of the TNO and GZO layers, indicating that there exists an interaction between these two layers. The TNO/GZO films with low resistivity have still been transparent.

Keywords

transparent conductorelectrical propertiesthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1604: Symposium U – Transparent Contacts for Electronics and Renewable Energy Technologies , 2014 , jsapmrs13-1604-7013
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Serverin, D., Kappertz, O., Nyberg, T., Berg, S., Wuttg, M., Thin Solid Films 515 3554 (2007)CrossRefGoogle Scholar
Oda, J., Nomoto, J., Miyata, T., Minami, T., Thin Solid Films 518 2984 (2010)CrossRefGoogle Scholar
Minami, T., Miyata, T., Ohtani, Y., Mochizuki, Y., Jpn. J. Appl. Phys. 45 L409 (2006)CrossRefGoogle Scholar
Minami, T., Ymamoto, T., Miyata, T., Thin Solid Films 366 63068 (2000)CrossRefGoogle Scholar
Minami, T., Miyata, T., Yamamoto, T., Toda, H., J. Vacuum Sci.Technol. A18 1584 (2000)CrossRefGoogle Scholar
Tsuji, T., Hiramatsu, M., Appl. Surf. Sci., 157 47 (2000)CrossRefGoogle Scholar
Chen, X., Guan, W., Fang, G., Zhao, X. Z., Appl. Surf. Sci., 252 1561 (2005)CrossRefGoogle Scholar
Furubayashi, Y., Hitosugi, T., Yamamoto, Y., Inaba, K., Kinoda, G., Hirose, Y., Shimada, T., Hasegawa, T., Appl. Phys. Lett. 86 52101 (2005)CrossRefGoogle Scholar
Ruske, F., Roczen, M., Lee, K., Wimmer, M., Gall, S., Hupkes, J., Hrunski, D., Rech, B., J. Appl. Phys., 107 013708 (2010)CrossRefGoogle Scholar
Matsuda, T., Furuta, M., Hiramatsu, T., Furuta, H., Li, C., Hirao, T., Appl. Surf. Sci. 256 6350 (2010)CrossRefGoogle Scholar
Hiramatsu, T., Furuta, M., Furuta, H., Matsudai, T., Hirao, T., Jpn. J. Appl. Phys. 46 pp. 3319 (2007)CrossRefGoogle Scholar
Hiramatsu, T., Furuta, M., Furuta, H., Matsudai, T., Li, C., Hirao, T., J. Cryst. Growth 311 282 (2009)CrossRefGoogle Scholar