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Electrical Transport in thin Silicide Films

Published online by Cambridge University Press:  26 February 2011

J. C. Hensel
J. C. Hensel*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

This paper reviews our recent studies of electrical transport in thin suicide films. Resistivity as a function of temperature, Hall effect, and magnetoresistance have been characterized for CoSi2 and NiSi2 and in conjunction with band theory provide estimates of important electronic parameters, viz. carrier densities and carrier scattering lengths. Resistivity data for TiSi2 and TaSi2 are included. Also examined in resistivity are (i) effects produced by ion bombardment which show CoSi2 to have an unusual susceptibility to radiation damage and (ii) classical size effects in the very thin film regime which show the boundary scattering to be principally specular. As an application we describe a Si/CoSi2/Si heterostructure transistor recently developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 499
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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