Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-01T02:12:02.064Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Beam Induced Crystallisation in Iron (III) Fluoride

Published online by Cambridge University Press:  21 February 2011

M.S.M. Saifullah ,
C.B. Boothroyd ,
G.A. Botton  and
C.J. Humphreys
M.S.M. Saifullah
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
C.B. Boothroyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
G.A. Botton
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
C.J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
Get access

Abstract

Metal fluorides are excellent candidates as high resolution inorganic resists in electron beam nanolithography. Hence it is important to study their damage characteristics under the electron beam to understand their behaviour as inorganic resists. In this paper the electron beam induced damage process in amorphous FeF3 films deposited by different techniques is investigated using selected area diffraction patterns and time resolved parallel electron energy loss spectroscopy. It is found that fluorine is lost from amorphous FeF3 during irradiation and that the material crystallises mainly to FeF2 with some crystalline FeF3. Time resolved energy loss spectroscopy studies show that the coordination polyhedra in amorphous FeF3 are randomly arranged FeF6 octahedra which arrange themselves to give a long range order in the electron beam during crystallisation to FeF2 and FeF3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 195
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kratschmer, E. and Isaacson, M., J. Vac. Sci. & Tech. B 5, p. 361 (1986).Google Scholar
2 Humphreys, C.J., Bullough, T.J., Devenish, R.W., Maher, D.M. and Turner, P.S., Scanning Microscopy Supplement 4, p. 185 (1990).Google Scholar
3 Fujita, J., Watanabe, H., Ochiai, Y., Manako, S., Tsai, J.S. and Matsui, S., Appi. Phys. Lett. 66 (22), p. 3065 (1995).Google Scholar
4 Salisbury, I., Timsit, R.S., Berger, S.D. and Humphreys, C.J. Appl. Phys. Letts., 45, p. 1289 (1984)Google Scholar
5 Chen, G.S., Boothroyd, C.B. and Humphreys, C.J., Inst. Phys. Conf. Ser. No. 138, p. 369 (1993).Google Scholar
6 Eibschiitz, M., Lines, M.E., Uitert, L.G. Van, Guggenheim, H.J. and Zydzik, G.J. Phys. Rev. B 24(5),p.2343(1981).Google Scholar
7 Eibschütz, M., Lines, M.E., Uitert, L.G. Van, Guggenheim, H.J. and Zydzik, G.J., Phys. Rev. B 29 (7), p.3843 (1984).Google Scholar
8 Saifullah, M.S.M., Boothroyd, C.B., Morgan, C.J. and Humphreys, C.J., Electron Microscopy and Analysis Group Conf. EMAG-95, Birmingham (1995), in press.Google Scholar