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Electron Transport Mechanisms in Nickel Schottky Barrier Contacts to Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

D.E. Heller ,
M. Gunes ,
F. Rubinelli ,
R.M. Dawson ,
S. Nag ,
S.J. Fonash  and
C.R. Wronski
D.E. Heller
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
M. Gunes
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
F. Rubinelli
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
R.M. Dawson
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
S. Nag
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
S.J. Fonash
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
C.R. Wronski
Affiliation:
The Pennsylvania State University, University Park, PA 16802.
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Abstract

Dark J-V characteristics of Ni Schottky diodes on a-Si:H films of various thicknesses were measured as a function of device temperature. Room-temperature photoconductivity and sub-bandgap absorption v. wavelength measurements of the intrinsic layers were also performed. Detailed numerical modelling was employed to determine the nature, density and energy distribution of sub- bandgap states. Best-fit modelling of photoconductivity, sub-bandgap absorption and dark JR-VR indicates that Nc=Nv=2.5×1020 cm-3, vR=2×106 cm/s, μn=33 cm2/V-s and μp=0.15 cm2/V-s for these films. It is found that a joint thermionic emission-drift/diffusion mechanism, as envisaged by Crowell and Sze, appears to be the most accurate picture of electron transport in Schottky diodes on intrinsic a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1031
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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