Article contents
Electronic and Atomic Properties of a-C:H/Semiconductor Interfaces
Published online by Cambridge University Press: 25 February 2011
Abstract
We have investigated the electronic and atomic properties of the interface between amorphous hydrogenated carbon (a-C:H) films and the semiconductor materials Si, Ge and GaAs with photoelectron spectroscopy, high resolution transmission electron microscopy and ion channeling technique. The different properties of the interfacial layers are summarized and compared to the adhesion quality of a-C:H films on these semiconductor materials.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
REFERENCES
- 1
- Cited by