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Electronic Defects in Beam - Crystallized Silicon

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Directed energy sources have been used to recrystallize implanted amorphous layers in bulk single - crystal silicon and to crystallize silicon thin films on insulating amorphous substrates. All investigated forms of beam annealing leave residual electronic defects in and near the recrystallized layer on bulk silicon, with densities in excess of those obtained by conventional furnace annealing. This paper summarizes the general observations that may be drawn from numerous experimental investigations of electronic defects in CW beam - recrystallized bulk silicon and affirms the timeliness of similar comprehensive studies of residual defects in crystallized - silicon thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 343
Copyright
Copyright © Materials Research Society 1982

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References

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