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Electronic Defects in Beam - Crystallized Silicon

Published online by Cambridge University Press:  15 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Directed energy sources have been used to recrystallize implanted amorphous layers in bulk single - crystal silicon and to crystallize silicon thin films on insulating amorphous substrates. All investigated forms of beam annealing leave residual electronic defects in and near the recrystallized layer on bulk silicon, with densities in excess of those obtained by conventional furnace annealing. This paper summarizes the general observations that may be drawn from numerous experimental investigations of electronic defects in CW beam - recrystallized bulk silicon and affirms the timeliness of similar comprehensive studies of residual defects in crystallized - silicon thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 343
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Johnson, N. M., CW Beam Processing of Silicon and Other Semiconductors (Academic Press, New York, 1982), ed. Gibbons, J. F., chap. 4.Google Scholar
2. Kachurin, G. A., Nidaev, E. V., Khodyachikh, A. V., and Kovaleva, L. A., Sov. Phys.-Semicond. 10, 1128 (1976).Google Scholar
3. Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Deline, V., Williams, P., and Evans, C. A. Jr., Appl. Phys. Lett. 32, 276 (1978).CrossRefGoogle Scholar
4. Auston, D. H., Golovchenko, J. A., Smith, P. R., Surko, C. M., and Venkatesan, T. N. C., Appl. Phys. Lett. 33, 539 (1978).CrossRefGoogle Scholar
5. Williams, J. S., Brown, W. L., Leamy, H. J., Poate, J. M., Rogers, J. W., Rousseau, D., Rozgonyi, G. A., Shelnutt, J. A., and Sheng, T. T., Appl. Phys. Lett. 33, 542 (1978).CrossRefGoogle Scholar
6. Regolini, J. L., Gibbons, J. F., Sigmon, T. W., Pease, R. F. W., Magee, T. J., and Peng, J., Appl. Phys. Lett. 34, 410 (1979).CrossRefGoogle Scholar
7. Ratnakumar, K. N., Pease, R. F. W., Bartelink, D. J., Johnson, N. M., and Meindl, J. D., Appl. Phys. Lett. 35, 463 (1979).CrossRefGoogle Scholar
8. Regolini, J. L., Johnson, N. M., Sinclair, R., Sigmon, T. W., and Gibbons, J. F., Laser and Electron Beam Processing of Materials (Academic Press, New York, 1980), eds. White, C. W. and Peercy, P. S., pp. 297–302.CrossRefGoogle Scholar
9. Kimerling, L. C. and Benton, J. L., Laser and Electron Beam Processing of Materials (Academic Press, New York, 1980), eds. White, C. W. and Peercy, P. S., pp. 385–396.CrossRefGoogle Scholar
10. Tasch, A. F. Jr., Holloway, T. C., Lee, K. F., and Gibbons, J. F., Electronics Lett. 15, 435 (1979).CrossRefGoogle Scholar
11. Lee, K. F., Gibbons, J. F., Saraswat, K. C., and Kamins, T. I., Appl. Phys. Lett. 35, 173 (1979).CrossRefGoogle Scholar
12. Lam, H. W., Tasch, A. F. Jr., Holloway, T. C., Lee, K. F., and Gibbons, J. F., IEEE Electron Device Lett. EDL – 1, 99 (1980).CrossRefGoogle Scholar
13. Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Laser and Electron - Beam Solid Interactions and Materials Processing (Elsevier, New York, 1981), eds. Gibbons, J. F., Hess, L. D., and Sigmon, T. W., pp. 463–470.Google Scholar
14. Gibbons, J. F. and Lee, K. F., IEEE Electron Device Lett. EDL –1, 117 (1980).CrossRefGoogle Scholar
15. Kamins, T. I. and Pianetta, P. A., IEEE Electron Device Lett. EDL – 1, 214 (1980).CrossRefGoogle Scholar
16. Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Insulating Films on Semiconductors (Springer - Verlag, New York, 1981), eds. Schulz, M. and Pensl, G., pp. 234–237.CrossRefGoogle Scholar
17. Tsaur, B. Y., Geis, M. W., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., these proceedings.Google Scholar
18. Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Appl. Phys. Lett. 38, 900 (1981).CrossRefGoogle Scholar
19. Kamins, T. I. and Von Herzen, B. P., IEEE Electron Device Left. EDL – 2, 313 (1981).CrossRefGoogle Scholar
20. Ng, K. K., Celler, G. K., Povilonis, E. I., Frye, R. C., Leamy, H. J., and Sze, S. M., IEEE Electron Device Lett. EDL–2, 316 (1981).CrossRefGoogle Scholar
21. Biegelsen, D. K., Johnson, N. M., Nemanich, R. J., and Moyer, M. D., and Fennell, L. E., these proceedings.Google Scholar
22. Frye, R. C. and Ng, K. K., Grain Boundaries in Semiconductors (Elsevier, New York, 1982), eds. Seager, C. H., Pike, G. E., and Leamy, H. J..Google Scholar
23. Fan, J. C. C., Geis, M. W., and Tsaur, B. Y., Appl. Phys. Lett. 38, 365 (1981).CrossRefGoogle Scholar
24. Maby, E. W., Geis, M. W, LeCoz, L. Y., Silversmith, D. J., Mountain, R. W., and Antoniadis, D. A., IEEE Electron Device Lett. EDL – 2, 241 (1981).CrossRefGoogle Scholar
25. Weinberg, Z. A., Appl. Phys. Lett. 39, 421 (1981).CrossRefGoogle Scholar
26. Hawkins, W. G. and Black, J., these proceedings.Google Scholar
27. Seager, C. H., Pike, G. E., and Ginley, D. S., Phys. Rev. Lett. 43, 532 (1979).CrossRefGoogle Scholar
28. Werner, J., Jantsch, W., Froehner, K. H., and Queisser, H. J., Grain Boundaries in Semiconductors (Elsevier, New York, 1982), eds. Seager, C. H., Pike, G. E., and Leamy, H. J..Google Scholar
29. Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Physics of MOS Insulators (Pergamon, New York, 1980), eds. Lucovsky, G., Pantelides, S. T., and Galeener, F. L., pp. 311–315.CrossRefGoogle Scholar
30. Johnson, N. M., J. Vac. Sci. Technol., to be published.Google Scholar