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Electronic Defects in Transient, Thermally Processed Semiconductors
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper summarizes the general observations that may be drawn from numerous studies of electronic defects in transient thermally annealed bulk single – crystal silicon and discusses the emerging subjects of electronic defect evaluation in beam – crystallized silicon thin films and in epitaxially – grown III – V semiconductors.
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- Research Article
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- Copyright © Materials Research Society 1985
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