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The Electronic Properties of a-Si:H Deposited With Hydrogen or Helium Dilution

Published online by Cambridge University Press:  10 February 2011

F. Zhong ,
W. S. Hong ,
V. Perez-Mendez ,
C. C. Chen  and
J. D. Cohen
F. Zhong
Affiliation:
Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
W. S. Hong
Affiliation:
Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
C. C. Chen
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403
J. D. Cohen
Affiliation:
Department of Physics and Materials Science Institute, University of Oregon, Eugene, OR 97403
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Abstract

We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatial distribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials, which suggest the ratio of charged (D-) density to the neutral defect (D0) density may be altered when growth conditions are varied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 363
Copyright
Copyright © Materials Research Society 1996

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