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Enhancement of Long-Wavelength Photoluminescence Due to Heat-Treatment in Si-Doped GaAs

Published online by Cambridge University Press:  03 September 2012

M. Suezawa ,
A. Kasuya ,
Y. Nishina  and
K. Sumino
M. Suezawa
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
A. Kasuya
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
Y. Nishina
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
K. Sumino
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980, Japan
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Abstract

Highly officient radiative recombination even at room temperature was found at a wavelength of about 1.3 μm in heat-treated Si-doped GaAs. The range of Si concentrations and the condition of heat-treatment to yield this intense luminescence were determined. Excitation spectra of the PL lines suggest that such PL lines are related to pairs of Si-donor and Si- acceptor and such pairs combined with gallium vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 543
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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