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Enhancement of the Quantum-Confined Stark Shift in Disordered, Strained InGaAs/GaAs Single Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Joseph Micallef ,
E. Herbert Li  and
Bernard L. Weiss
Joseph Micallef
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford
E. Herbert Li
Affiliation:
Surrey, GU2 5XH, UK.
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Abstract

Theoretical results are presented showing how quantum well disordering modifies the quantum-confined Stark effect in strained InGaAs/GaAs single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. It is shown that for a sufficiently long interdiffusion the exciton Stark shift in the disordered quantum well is greater than in the as-grown quantum well and that the change in electroabsorption near the fundamental absorption edge is larger in the disordered well than in the as-grown well for the same applied electric field. These results demonstrate the potential of using disordering to achieve improved performance in strained InGaAs/GaAs quantum well electroabsorption modulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 181
Copyright
Copyright © Materials Research Society 1994

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