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Enhancement of the Thermoelectric Figure of Merit in Gated Bismuth Telluride Nanowires

Published online by Cambridge University Press:  31 January 2011

Igor Bejenari ,
Valeriu Kantser  and
Alexander Balandin
Igor Bejenari
Affiliation:
ibejenari@ee.ucr.edu, University of California at Riverside, Electrical Engineering, Riverside, California, United States
Valeriu Kantser
Affiliation:
kanster@lises.asm.md, Institute of Electronic Engineering & Industrial Technologies, Kishinev, Moldova
Alexander Balandin
Affiliation:
balandin@ee.ucr.edu, University of California at Riverside, Electrical Engineering, Riverside, California, United States
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Abstract

We theoretically studied how the electric filed effect can modify thermoelectric properties of intrinsic bismuth telluride nanowires, which are grown along [110] direction. The electronic structure and wave functions were calculated by solving the self-consistent system of the Schrodinger and Poisson equations by means of both the Thomas-Fermi approximation and the spectral element method. The thermoelectric parameters were determined using a constant relaxation-time approximation. The external electric field can increase the Seebeck coefficient of a nanowire with 7 - 15 nm lateral dimensions by nearly a factor of two, and enhance the figure of merit by an order of magnitude.

Keywords

nanostructurethermoelectricityelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1166: Symposium N – Materials and Devices for Thermal-to-Electric Energy Conversion , 2009 , 1166-N05-09
Copyright
Copyright © Materials Research Society 2009

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References

1 Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., Nature 413, 597 (2001)Google Scholar
2 Zhou, J., Jin, C., Seol, J. H., Li, X., and Shi, L., Appl. Phys. Lett. 87, 133109 (2005).Google Scholar
3 Li, L., Yang, Y., Huang, X., Li, G., and Zhang, L., Nanotechnology 17, 1706 (2006).Google Scholar
4 Butenko, A. V., Sandomirsky, V., Schlesinger, Y., and Dm. Shvarts, J. Appl. Phys. 82, 1266–1273 (1997).Google Scholar
5 Sandomirsky, V., Butenko, A. V., Levin, R., and Schlesinger, Y., J. Appl. Phys. 90, 2370 (2001).10.1063/1.1389074Google Scholar
6 , Boukai, Xu, K., and Heath, J.R., Adv. Mater. 18, 864 (2006).Google Scholar
7 Bejenari, I., Kantser, V., Phys. Rev. B 78, 115322 (2008).10.1103/PhysRevB.78.115322Google Scholar
8 Zubkov, V. I., Fiz. Tekh. Poluprovodn. 40, 1236 (2006) [Sov. Phys. Semicond. 40, 1204 (2006)].Google Scholar
9 Luscombe, J. H., Bouchard, A. M., and Luban, M., Phys. Rev. B 46, 10262 (1992).10.1103/PhysRevB.46.10262Google Scholar
10 Ridley, B. K., Quantum Processes in Semiconductors, 3rd ed. (Oxford Univ. Press Inc., New York, 1993) p. 378.Google Scholar
11 Cheng, C., Liu, Q. H., Lee, J.-H., and Massoud, H. Z., J. Comput. Electron. 3, 417 (2004).Google Scholar