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Environmental Effects on Cu/SiO2 and Cu/Ti/SiO2Thin Film Adhesion

Published online by Cambridge University Press:  10 February 2011

N. I. Tymiak ,
M. Li ,
A. A. Volinsky ,
Y. Katz  and
W. W. Gerberich
N. I. Tymiak
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
M. Li
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
A. A. Volinsky
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
Y. Katz
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
W. W. Gerberich
Affiliation:
CEMS Department, University of Minnesota, MN 55455, tymiak@cems.umn.edu
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Abstract

For several microelectronics applications, Cu/dielectric adhesion is a key reliability issue. Either electroplating or local galvanic coupling under moist operating conditions may result in hydrogen induced interface weakening. The present study compared hydrogen effects on Cu/SiO2 adhesion for sputter deposited f'dms with and without Ti underlayers. Thin Cu and Cu/Ti films ranging from 80–3000 nm have been evaluated. Direct observations of the surface during electrolytic charging have shown no evidence of film/substrate debonding for Cu/Ti systems. In contrast, extensive delaminations have been observed for Cu films. Indentation testing immediately after charging indicated up to 100% decrease in the practical adhesion for Ti/Cu films. The observed effect resulted from a true interfacialfracture energy reduction from 4 to 2 J/m2, Plastic energy dissipation was assumed unaffected as no yield stress changes were detected after charging. Even with the deleterious effect of hydrogen, adhesion strength of Cu/Ti films remained higher than that of non-charged Cu films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 269
Copyright
Copyright © Materials Research Society 1999

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References

1. Wei, Y. and Hutchinson, J., Mech, J.. Phys. Solids, 45, p. 1137, (1997).Google Scholar
2. Stringfellow, R.G. and Freund, L.B., Int. J. Solids Structures, 30, p. 1379 (1993).Google Scholar
3. Bagchi, A. and Evans, A.G., Thin Solid Films, 286, p. 203 (1986).Google Scholar
4. Tymiak, N.I., Volinsky, A.A., Kriese, M.D., Downs, S.A. and Gerberich, W.W., submitted to Met. Trans., (1999).Google Scholar
5. Volinsky, A.A., Tymiak, N.I., Kriese, M.D., Gerberich, W.W. and Hutchinson, J.W., accepted for publication in MRS Proceedings, Symposium M, Fall 1998.Google Scholar
6. Gerberich, W.W., Kramer, D.E., Tymiak, N.I., Volinsky, A.A., Bahr, D.F. and Kriese, M.D., accepted for publication in Acta Metall. Mater. (1999).Google Scholar
7. Russell, S.W., Raflaski, S.A., Spreitzer, R.L., Li, J., Moinpour, M., Moghadam, F., Alford, T.L., Thin Solid Films 262, p. 154 (1995).Google Scholar
8. Kriese, M.D., Moody, N.R. and Gerberich, W.W., accepted for publication in Acta Metall. Mater., (1999).Google Scholar
9. Elyutin, V.P., Mitin, B.S. and Grits, E.F., Inorganic Materials, 10, p. 723 (1974).Google Scholar
10. Wu, T.W., J. Mater. Res., 6, p.407, (1991).Google Scholar
11. Marshall, D.B. and Evans, A.G., J. Appl. Phys., 56, p. 2632 (1984).Google Scholar
12. Katz, Y., Tymiak, N. and Gerberich, W.W., An invited paper for Recent Advances in the Engineering Aspects of Hydrogen Embrittlement of the Engng.Fract.Mech, (1999).Google Scholar
13. Huang, H. and Gerberich, W.W., Acta. Metall. Mater., 42, p. 639, (1994).Google Scholar