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Epitaxial CeO2 on Silicon Substrates and the Potential of Si/CeO2/Si for SOI Structures

Published online by Cambridge University Press:  15 February 2011

A. H. Morshed ,
S. X. Liu ,
R. Leonard ,
F. G. Mcintosh ,
N. A. El-Masry  and
S. M. Bedair
A. H. Morshed
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, N.C. 27695, bedaij@eos.ncsu.edu
S. X. Liu
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, N.C. 27695–7916, elmasry@mat.mte.ncsu.edu
R. Leonard
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, N.C. 27695–7916, elmasry@mat.mte.ncsu.edu
F. G. Mcintosh
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, N.C. 27695, bedaij@eos.ncsu.edu
N. A. El-Masry
Affiliation:
Materials Science and Engineering Department, North Carolina State University, Raleigh, N.C. 27695–7916, elmasry@mat.mte.ncsu.edu
S. M. Bedair
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, N.C. 27695, bedaij@eos.ncsu.edu
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Abstract

CeO2 is nearly lattice matched to Si and has the CaF2 cubic structure thus it offers the potential for the epitaxial growth of an insulating film on Si. Laser ablation of a CeO2 target in an ultra high vacuum system was used for the deposition of single crystal CeO2. The effect of post growth thermal and rapid thermal annealing in O2, N2 and Ar atmosphere was found to have pronounced effects on the electrical properties measured by C-V and the optical properties measured by photoluminescence.

We report on our initial results for the growth of epitaxial Si on the deposited CeO2 using low pressure CVD. Both RHEED and TEM studies showed that single crystal epitaxial Si was deposited on CeO2. The details of the Si deposition on CeO2 films for potential of SOI (silicon on insulator) structures will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 339
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Tye, Lee, Chikyow, T., El-Masry, N. A., and Bedair, S. M., Materials Research Society Proceedings, 318, p. 551(1994).Google Scholar
2. Chikyow, T., Tye, L., El-Masry, N.A., and Bedair, S.M., Appl. Phys. Lett. 65, p. 1030 (1994).Google Scholar
3. Tye, L., Chikyow, T., El-Masry, N. A., and S. M., , Materials Research Society Proceedings, 341, p. 107(1994).Google Scholar
4. Tye, L., Chikyow, T., McLarty, P., El-Masry, N. A., and Bedair, S. M., Applied Physics Letters 65, p. 3081 (1994).Google Scholar
5. Morshed, A. H., Tornita, M., El-Masry, N. A., Mclarty, P., Parikh, N.P. and Bedair, S.M., Materials Research Society Proceedings, 401, p. 121(1996).Google Scholar