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Erbium Doped Silicon for Light Emitting Devices

Published online by Cambridge University Press:  10 February 2011

J. Michel ,
B. Zheng ,
J. Palm ,
E. Ouellette ,
F. Gan  and
L. C. Kimerling
J. Michel
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
B. Zheng
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
J. Palm
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
E. Ouellette
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
F. Gan
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
L. C. Kimerling
Affiliation:
Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Cambridge, MA 02139, jurgen@jurgen.mit.edu
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Abstract

We report on the excitation and de-excitation processes of erbium implanted in silicon and the integration of Si:Er light emitting devices (LED) with standard CMOS technology. We find two deexcitation processes, an Auger process below 100 K and a phonon mediated energy backtransfer above 100 K. We present the first optical voice link with a silicon LED as the emitter. Optical transmission system performance with our LED is possible below 200 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 317
Copyright
Copyright © Materials Research Society 1996

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References

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