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Excimer Laser Etching of Cupric Oxide

Published online by Cambridge University Press:  26 February 2011

G. N. A. van Veen ,
W. Vrijmoeth ,
T. S. Baller  and
J. Dieleman
G. N. A. van Veen
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
W. Vrijmoeth
Affiliation:
State University of Utrecht, Dept. of Experimental Physics, P.B. 80.000, 3508 TA Utrecht, The Netherlands.
T. S. Baller
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
J. Dieleman
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
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Abstract

Polycrystalline CuO samples are irradiated in UHV by excimer laser pulses at 308nm. Mass spectrometry combined with time-of-flight measurements is used to determine the composition of the desorbing particles and the desorption mechanisms. Additional information is provided by Scanning-Electron-Microscopy of the etched surfaces. At fluences below 1.8 J cm−2 the products Cu, O and O2 are desorbed by a purely thermal mechanism at temperatures up to 6000 K and a copper rich surface mask is formed. At higher power densities an additional ablative contribution is monitored which increases with power density, and much less surface area is covered by a Cu-rich mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 641
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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