Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-18T04:29:39.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Excimer Laser Induced Photolytic Deposition of Aluminum Nitride: Ftlm Growth and Properties

Published online by Cambridge University Press:  15 February 2011

G. Radhakrishnan ,
P.M. Adams  and
N. Marquez
G. Radhakrishnan
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
P.M. Adams
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
N. Marquez
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
Get access

Abstract

Excimer laser photolysis has been used for the growth of smooth and well-adhering thin films of aluminum nitride (AlN) on Si, fused quartz, and KBr substrates at temperatures as low as 350 K. The photolysis was carried out at 193 nm, with the laser beam propagating parallel to the substrate. Trimethylamine alane and ammonia were used as gas-phase precursors. The growth rate of these films was investigated as a function of laser fluence. These measurements, as well as other investigations of film growth with and without the photolysis laser, reveal that no AlN film is produced in the absence of laser-induced photolysis of the precursors. The morphology and physical properties of these laser-grown films have been studied by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Optical absorption spectra of films grown on fused quartz were measured as a function of substrate temperature. A substrate temperature of 350 K was found to be optimum for obtaining good film quality while precluding any effects due to the thermal decomposition of the precursors. The films have excellent dielectric properties as shown by I-V and C-V measurements. The details of AlN film growth using low-temperature gas-phase photolysis at 193 nm and the characterization of these laser grown films will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 649
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Radhakrishnan, G., J. Appl. Phys. 78, 6000 (1995).Google Scholar
2 Radhakrishnan, G. and Lince, J.R., J. Electron. Mater. (in press).Google Scholar
3 Edgar, J.H., Yu, Z. J., Ahmed, A.U., and Rys, A., Thin Solid Films 189, L11 (1990).Google Scholar
4 Demiryont, H., Thompson, L.R., and Collins, GJ., J. Appl. Phys. 59, 3235 (1986).Google Scholar
5 Li, X. and Tansley, T.L., J. Appl. Phys. 68, 5369 (1990).Google Scholar
6 Kotula, P.G., Carter, C.B., and Norton, M.G., J. Mater. Sci. Lett. 13, 1275 (1994).Google Scholar
7 Foulon, F. and Stuke, M., Appl. Phys. Lett. 62, 2173 (1993).Google Scholar
8 Gladfelter, W.L., Boyd, D.C., and Jensen, K.F., Chem. Mater. 1, 339 (1989).Google Scholar
9 Tauc, J., Grigorovici, R., and Vancu, A., Phys. Status Solidi 15, 627 (1966).Google Scholar
10 Amorphous Semiconductors, Ed. Brodsky, H.J. (Springer-Verlag, Berlin, 1979).Google Scholar
11 Optical Processes in Semiconductors, Pankove, J. I. (Dover Publications, Inc., 1971).Google Scholar
12 Landolt-Börnstein, New Series, Ed. Madelung, O., (Springer-Verlag,Berlin, 1982), Vol. 17a, pp. 158–160.Google Scholar