Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-17T17:20:16.184Z Has data issue: false hasContentIssue false
  • English
  • Français

Excimer Laser Planarization of Diamond Films

Published online by Cambridge University Press:  21 February 2011

Dong-Gu Lee ,
S. D. Harkness  and
Rajiv K. Singh
Dong-Gu Lee
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL32611
S. D. Harkness
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL32611
Rajiv K. Singh
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL32611
Get access

Abstract

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The calculated threshold energy density for etching of pure crystalline diamond was about 1.7 J/cm2. However, the threshold energy density was affected by the angle of laser incidence. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. Also, the etching rate of diamond films at normal laser incidence was lower than that of films tilted at 45° for laser fluences above 2.3 J/cm2. When the angle of incidence was 80° to the diamond surface normal, the peak-to-valley surface roughness was significantly reduced, from 30 μm to 0.5μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 127
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhao, T., Grogan, D.F., Bovard, B.G., and Macleod, H.A., in Diamond Optics III, edited by Feldman, A. and Holly, S. (Froc. Soc. Phot-Opt. Instrum. Eng. 1325, 1990) pp. 142–151; Appl. Opt. 31, 1483 (1992).Google Scholar
2. Hirata, A., Tokura, H., and Yoshikawa, M., Thin Solid Films 212, 43 (1992).Google Scholar
3. Tokura, H., Yang, C.-F., and Yoshikaw, M., Thin Solid Films 212, 49 (1992).Google Scholar
4. Tezuka, S. and Yosikawa, M., J. Jpn. Soc. Precision Eng. 56, 2255 (1990).Google Scholar
5. Blatter, A., BÖgli, U., Bouilov, L.L., Chapliev, N.I., Konov, V.I., Pimenov, S.M., Smolin, A.A., and Spitsyn, I.V., J. Eletrochem. Soc. 91, 357 (1991).Google Scholar
6. BÖgli, U., Blatter, A., Pimenov, S.M., Smolin, A.A., and Konov, V.I., Diamond & Rel. Mater. 1, 782 (1992).Google Scholar
7. Rothschild, M., Amone, A., and Ehrlich, D.J., J. Vac. Sci. Technol. B, 4(1), 310 (1986).Google Scholar
8. Ageev, V.P.. Builov, L.L., Konov, V.I., Kuzmichev, A.V., Pemenov, S.M., Prokhorov, Acedemician AM, Ral'chenko, V.G., Spitsyn, B.V., and Chapliev, B.I., Sov. Phys. Dokl. 33(11), 840 (1988).Google Scholar
9. Siegman, A.E. and Fauchet, P.M., IEEE J. Quantum Electon. QE- 22(8), 1384 (1986).Google Scholar
10. Singh, R.K. and Viatella, J., J. Met. 44, 22 (1992).Google Scholar
11. CRC Handbook of Marine Science, edited by Walton Smith, F.G. (CRC press, Cleveland, Ohio, vol 1, 1974), p. 218 Google Scholar
12. Coste, C., in Ozonization manual for water and wastewater treatment, edited by Masschelein, W.J. (John Wiley & Sons, New York, 1982), pp. 206–214.Google Scholar